Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

Journal Article · Mon Jan 20 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863035· OSTI ID:22280602

Nicolai, J.; Gatel, Ch.; Warot-Fonrose, B.; Ponchet, A. ^[1]; Teissier, R.; Baranov, A. N. ^[2]; Magen, C. ^[3]

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1. CEMES CNRS-UPR 8011, Université de Toulouse, 31055 Toulouse (France)
2. IES CNRS-UMR 5214, 34095 Montpellier (France)
3. INA-Universidad de Zaragoza, 50018 Zaragoza (Spain)

InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.

• OSTI ID: 22280602
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ASYMMETRY
COMPARATIVE EVALUATIONS
HETEROJUNCTIONS
IMAGES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
PHASE STABILITY
PHASE STUDIES
STRAINS
TRANSMISSION ELECTRON MICROSCOPY