Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

Journal Article · Tue Jul 21 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4926786· OSTI ID:22490804

Nicolaï, J.; Warot-Fonrose, B.; Ponchet, A. ^[1]; Teissier, R.; Baranov, A. N. ^[2]; Magen, C. ^[3]

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1. CEMES CNRS-UPR 8011, Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)
2. IES CNRS-UMR 5214, 34095 Montpellier (France)
3. Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France)

Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

• OSTI ID: 22490804
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
CHEMICAL COMPOSITION
CHEMICAL PROPERTIES
CHEMISTRY
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
PHASE STUDIES
RESOLUTION
STABILITY
STRAINS
TRANSMISSION ELECTRON MICROSCOPY