On the interface structure in InAs/AlSb quantum wells grown by molecular-beam epitaxy

Journal Article · Sat May 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586768· OSTI ID:147029

Bolognesi, C R; Ibbetson, J; Brar, B ^[1]

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1. Univ. of California, Santa Barbara, CA (United States); and others

Three roughness scales relevan to the growth of InAs/AlSb quantum wells have been studied using three techniques yielding complementary information. Reflection high-energy electron diffraction measurements were used to monitor the roughness of growing surfaces. Comparison with the interface roughness extracted from transport measurements suggests the microscopic interface roughness arises because of the bonding corssover from AlSb to InAs. The possibility of strain-induced ordering at the interfaces due to the difference in bond lengths between InSb and AlAs interfacial bonds was investigated. Raman scattering from mechanical interface modes (related to the atomic masses and bonding force constants involved at the interface) was used to gain insight in the microscopic interface configuration. 13 refs., 4 figs.

• OSTI ID: 147029
• Report Number(s): CONF-9210296--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ANTIMONIDES
BOND LENGTHS
CRYSTAL GROWTH
ELECTRON DIFFRACTION
INDIUM ARSENIDES
INTERFACES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
ROUGHNESS
SCATTERING