Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes

Journal Article · Mon Jun 29 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106720· OSTI ID:7294104

Sela, I ^[1]; Bolognesi, C R; Samoska, L A; Kroemer, H ^[2]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. Electrical and Computer Engineering, and Engineering Materials Departments, University of California, Santa Barbara, California 93106 (United States)

We have studied the interface structure and the quality of molecular-beam-epitaxy grown AlSb/InAs/AlSb quantum wells through Raman scattering from interface vibrational modes from single quantum wells. A series of samples was grown by varying the growth temperature and the interface composition (by forcing either a light AlAs or a heavy InSb interface bond configuration at each InAs/AlSb interface). We have observed the InSb modes for all the samples and related the intensity and shape of the interface modes to the structure and quality of the interfaces. This work demonstrates that a single interface heterostructure can be probed by Raman scattering.

• OSTI ID: 7294104
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:26; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
ENERGY LEVELS
EPITAXY
EXCITED STATES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
JUNCTIONS
LASER SPECTROSCOPY
MOLECULAR BEAM EPITAXY
PNICTIDES
RAMAN SPECTROSCOPY
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
VIBRATIONAL STATES