Sb surfactant mediated growth of InAs/AlAs{sub 0.56}Sb{sub 0.44} strained quantum well for intersubband absorption at 1.55 μm

Journal Article · Mon Feb 23 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913845· OSTI ID:22412688

Zhao, Yu; Bertru, Nicolas; Folliot, Hervé; Perrin, Mathieu ^[1]; Nicolaï, Julien; Gatel, Christophe; Warot-Fonrose, B.; Ponchet, Anne ^[2]

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1. Université Européenne de Bretagne, INSA, FOTON, UMR-CNRS 6082, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)
2. CEMES CNRS-UPR8011, Université de Toulouse, 31055 Toulouse (France)

Surfactant mediated growth of strained InAs/AlAs{sub 0.56}Sb{sub 0.44} quantum wells on InP (001) substrate is investigated. X ray diffraction and transmission electron microscopy analysis reveal that the supply of antimony on InAs surface delays the 2D to 3D growth transition and allows the growth of thick InAs/AlAsSb quantum wells. Quantum well as thick as 7 ML, without defect was achieved by Sb surfactant mediated growth. Further high resolution transmission electron microscopy measurement and geometric phase analysis show that InAs/AlAsSb interfaces are not abrupt. At InAs on AlAsSb interface, the formation of a layer presenting lattice parameter lower than InP leads to a tensile stress. From energetic consideration, the formation of As rich AlAsSb layer at interface is deduced. At AlAsSb on InAs interface, a compressive layer is formed. The impact on optical properties and the chemical composition of this layer are discussed from microscopic analysis and photoluminescence experiments.

• OSTI ID: 22412688
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
ALUMINIUM ARSENIDES
ANTIMONIDES
CHEMICAL COMPOSITION
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
LATTICE PARAMETERS
LAYERS
OPTICAL PROPERTIES
PHASE STUDIES
PHOTOLUMINESCENCE
QUANTUM WELLS
STRAINS
STRESSES
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION