Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells

Debnath, Mukul C.; Liang, Baolai; Laghumavarapu, Ramesh B.; Wang, Guodong; Das, Aparna; Juang, Bor-Chau; Huffaker, Diana L.

doi:10.1063/1.4984832

Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs_0.56Sb _0.44 matrix for use in intermediate band solar cells

Journal Article · Tue Jun 06 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4984832· OSTI ID:1473900

^[1]; Liang, Baolai ^[2]; Laghumavarapu, Ramesh B. ^[2]; ^[2]; Das, Aparna ^[2]; Juang, Bor-Chau ^[2]; Huffaker, Diana L. ^[2]

Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst. and Dept. of Electrical Engineering; University of California Los Angeles
Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst. and Dept. of Electrical Engineering

For this work, high-quality InAs quantum dots (QDs) with nominal thicknesses of 5.0–8.0 monolayers were grown on a digital AlAs_0.56Sb_0.44 matrix lattice-matched to the InP(001) substrate. All QDs showed bimodal size distribution, and their optical properties were investigated by photoluminescence (PL) and time-resolved PL measurements. Power dependent PL exhibited a linear relationship between the peak energy and the cube root of the excitation power for both the small QD family (SQDF) and the large QD family (LQDF), which is attributed to the type-II transition. The PL intensity, peak energy, and carrier lifetime of SQDF and LQDF showed very sensitive at high temperature. Above 125 K, the PL intensity ratio increased continuously between LQDF and SQDF, the peak energy shifted anomalously in SQDF, and the longer carrier radiative lifetime (≥3.0 ns at 77 K) reduced rapidly in SQDF and slowly in LQDF. These results are ascribed to thermally activated carrier escape from SQDF into the wetting layer, which then relaxed into LQDF with low-localized energy states.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Los Angeles, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0005325

OSTI ID:: 1473900

Alternate ID(s):: OSTI ID: 1365600

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 121; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP Yi, Xin; Xie, Shiyu; Liang, Baolai Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-27507-w	journal	June 2018
Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics Chatterjee, Arka; Panda, Debiprasad; Patwari, Jayita Semiconductor Science and Technology, Vol. 34, Issue 9 https://doi.org/10.1088/1361-6641/ab3487	journal	August 2019

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