Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells

Debnath, Mukul C.; Liang, Baolai; Laghumavarapu, Ramesh B.; Wang, Guodong; Das, Aparna; Juang, Bor-Chau; Huffaker, Diana L.

doi:10.1063/1.4984832

Title: Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs_0.56Sb _0.44 matrix for use in intermediate band solar cells

Journal Article · Tue Jun 06 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4984832· OSTI ID:1473900

^[1]; Liang, Baolai ^[1]; Laghumavarapu, Ramesh B. ^[1];

^[1]; Das, Aparna ^[1]; Juang, Bor-Chau ^[1]; Huffaker, Diana L. ^[1]

Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst. and Dept. of Electrical Engineering

For this work, high-quality InAs quantum dots (QDs) with nominal thicknesses of 5.0–8.0 monolayers were grown on a digital AlAs_0.56Sb_0.44 matrix lattice-matched to the InP(001) substrate. All QDs showed bimodal size distribution, and their optical properties were investigated by photoluminescence (PL) and time-resolved PL measurements. Power dependent PL exhibited a linear relationship between the peak energy and the cube root of the excitation power for both the small QD family (SQDF) and the large QD family (LQDF), which is attributed to the type-II transition. The PL intensity, peak energy, and carrier lifetime of SQDF and LQDF showed very sensitive at high temperature. Above 125 K, the PL intensity ratio increased continuously between LQDF and SQDF, the peak energy shifted anomalously in SQDF, and the longer carrier radiative lifetime (≥3.0 ns at 77 K) reduced rapidly in SQDF and slowly in LQDF. These results are ascribed to thermally activated carrier escape from SQDF into the wetting layer, which then relaxed into LQDF with low-localized energy states.

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Research Organization:: Univ. of California, Los Angeles, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0005325

OSTI ID:: 1473900

Alternate ID(s):: OSTI ID: 1365600

Journal Information:: Journal of Applied Physics, Vol. 121, Issue 21; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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References (40)

Self-organized InGaAs/GaAs quantum dot arrays for use in high-efficiency intermediate-band solar cells Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka Journal of Physics D: Applied Physics, Vol. 46, Issue 2 https://doi.org/10.1088/0022-3727/46/2/024002	journal	December 2012
Transient luminescence of dense InAs/GaAs quantum dot arrays Tomm, J. W.; Elsaesser, T.; Mazur, Yu. I. Physical Review B, Vol. 67, Issue 4 https://doi.org/10.1103/PhysRevB.67.045326	journal	January 2003
Wetting layer carrier dynamics in InAs/InP quantum dots Hinooda, S.; Loualiche, S.; Lambert, B. Applied Physics Letters, Vol. 78, Issue 20 https://doi.org/10.1063/1.1338953	journal	May 2001
Nanostructured Absorbers for Multiple Transition Solar Cells Levy, Michael Y.; Honsberg, Christiana IEEE Transactions on Electron Devices, Vol. 55, Issue 3 https://doi.org/10.1109/TED.2007.914829	journal	March 2008
Size-dependent radiative lifetime in vertically stacked (In,Ga)As quantum dot structures Zhang, Y. C.; Pancholi, A.; Stoleru, V. G. Applied Physics Letters, Vol. 90, Issue 18 https://doi.org/10.1063/1.2734495	journal	April 2007
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Luque, Antonio; Martí, Antonio Physical Review Letters, Vol. 78, Issue 26 https://doi.org/10.1103/PhysRevLett.78.5014	journal	June 1997
Thermally activated carrier transfer and luminescence line shape in self‐organized InAs quantum dots Brusaferri, L.; Sanguinetti, S.; Grilli, E. Applied Physics Letters, Vol. 69, Issue 22 https://doi.org/10.1063/1.117304	journal	November 1996
Improved composition control of digitally grown AlAsSb lattice-matched to InP Hall, E.; Kroemer, H.; Coldren, L. A. Journal of Crystal Growth, Vol. 203, Issue 3 https://doi.org/10.1016/S0022-0248(99)00122-0	journal	June 1999
Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer Jang, Y. D.; Badcock, T. J.; Mowbray, D. J. Applied Physics Letters, Vol. 92, Issue 25 https://doi.org/10.1063/1.2949741	journal	June 2008
Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer Liu, H. Y.; Sellers, I. R.; Badcock, T. J. Applied Physics Letters, Vol. 85, Issue 5 https://doi.org/10.1063/1.1776631	journal	August 2004
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells King, R. R.; Law, D. C.; Edmondson, K. M. Applied Physics Letters, Vol. 90, Issue 18 https://doi.org/10.1063/1.2734507	journal	April 2007
Carrier dynamics in type-II GaSb/GaAs quantum dots Hatami, F.; Grundmann, M.; Ledentsov, N. N. Physical Review B, Vol. 57, Issue 8 https://doi.org/10.1103/PhysRevB.57.4635	journal	February 1998
Type-II band alignment in Si/ ${Si}_{1 - x}$ ${Ge}_{x}$ quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory Baier, T.; Mantz, U.; Thonke, K. Physical Review B, Vol. 50, Issue 20 https://doi.org/10.1103/PhysRevB.50.15191	journal	November 1994
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers Simmonds, Paul J.; Babu Laghumavarapu, Ramesh; Sun, Meng Applied Physics Letters, Vol. 100, Issue 24 https://doi.org/10.1063/1.4729419	journal	June 2012
High-density InAs/GaAs ₁₋ _x Sb _x quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells Debnath, M. C.; Mishima, T. D.; Santos, M. B. Journal of Applied Physics, Vol. 119, Issue 11 https://doi.org/10.1063/1.4943631	journal	March 2016
InAs/GaAsSb quantum dot solar cells Hatch, Sabina; Wu, Jiang; Sablon, Kimberly Optics Express, Vol. 22, Issue S3 https://doi.org/10.1364/OE.22.00A679	journal	January 2014
Accurate control of As and Sb incorporation ratio during solid-source molecular-beam epitaxy Zhang, Yong-Hang Journal of Crystal Growth, Vol. 150 https://doi.org/10.1016/0022-0248(95)80057-J	journal	May 1995
Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge Sablon, Kimberly A.; Little, John W.; Mitin, Vladimir Nano Letters, Vol. 11, Issue 6 https://doi.org/10.1021/nl200543v	journal	June 2011
GaSb/InGaAs quantum dot–well hybrid structure active regions in solar cells Laghumavarapu, Ramesh B.; Liang, Baolai L.; Bittner, Zachary S. Solar Energy Materials and Solar Cells, Vol. 114 https://doi.org/10.1016/j.solmat.2013.02.027	journal	July 2013
Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status Zhukov, A. E.; Ustinov, V. M.; Kovsh, A. R. Semiconductor Science and Technology, Vol. 14, Issue 6 https://doi.org/10.1088/0268-1242/14/6/315	journal	January 1999
Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots Muñoz-Matutano, G.; Suárez, I.; Canet-Ferrer, J. Journal of Applied Physics, Vol. 111, Issue 12 https://doi.org/10.1063/1.4729315	journal	June 2012
Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots Yang, Weidong; Lowe-Webb, Roger R.; Lee, Hao Physical Review B, Vol. 56, Issue 20 https://doi.org/10.1103/PhysRevB.56.13314	journal	November 1997
Photon ratchet intermediate band solar cells Yoshida, M.; Ekins-Daukes, N. J.; Farrell, D. J. Applied Physics Letters, Vol. 100, Issue 26 https://doi.org/10.1063/1.4731277	journal	June 2012
Challenges to the concept of an intermediate band in InAs/GaAs quantum dot solar cells Bartolo, Robert E.; Dagenais, Mario Applied Physics Letters, Vol. 103, Issue 14 https://doi.org/10.1063/1.4822322	journal	September 2013
Excitons in type-II quantum dots: Finite offsets Laheld, U. E. H.; Pedersen, F. B.; Hemmer, P. C. Physical Review B, Vol. 52, Issue 4 https://doi.org/10.1103/PhysRevB.52.2697	journal	July 1995
Thermal redistribution of photocarriers between bimodal quantum dots Zhang, Y. C.; Huang, C. J.; Liu, F. Q. Journal of Applied Physics, Vol. 90, Issue 4 https://doi.org/10.1063/1.1385579	journal	August 2001
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells Shockley, William; Queisser, Hans J. Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519 https://doi.org/10.1063/1.1736034	journal	March 1961
Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength Zhou, X. L.; Chen, Y. H.; Li, T. F. Applied Physics Letters, Vol. 99, Issue 3 https://doi.org/10.1063/1.3614433	journal	July 2011
Self-assembled island formation in heteroepitaxial growth Barabási, Albert-László Applied Physics Letters, Vol. 70, Issue 19 https://doi.org/10.1063/1.118920	journal	May 1997
In situ , atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001) Kobayashi, N. P.; Ramachandran, T. R.; Chen, P. Applied Physics Letters, Vol. 68, Issue 23 https://doi.org/10.1063/1.116580	journal	June 1996
Spontaneous Ordering of Arrays of Coherent Strained Islands Shchukin, V. A.; Ledentsov, N. N.; Kop'ev, P. S. Physical Review Letters, Vol. 75, Issue 16 https://doi.org/10.1103/PhysRevLett.75.2968	journal	October 1995
Model for intermediate band solar cells incorporating carrier transport and recombination Lin, Albert S.; Wang, Weiming; Phillips, Jamie D. Journal of Applied Physics, Vol. 105, Issue 6 https://doi.org/10.1063/1.3093962	journal	March 2009
Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs _{1− x} Sb _x quantum dots Nishikawa, Kazutaka; Takeda, Yasuhiko; Yamanaka, Ken-ichi Journal of Applied Physics, Vol. 111, Issue 4 https://doi.org/10.1063/1.3688864	journal	February 2012
Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage Kissel, H.; Müller, U.; Walther, C. Physical Review B, Vol. 62, Issue 11 https://doi.org/10.1103/PhysRevB.62.7213	journal	September 2000
Optical and structural properties of InP quantum dots embedded in ${({Al}_{x} {Ga}_{1 - x})}_{0.51} {In}_{0.49} P$ Schulz, W. -M.; Roßbach, R.; Reischle, M. Physical Review B, Vol. 79, Issue 3 https://doi.org/10.1103/PhysRevB.79.035329	journal	January 2009
Size distribution of coherently strained InAs quantum dots Schmidt, K. H.; Medeiros-Ribeiro, G.; Kunze, U. Journal of Applied Physics, Vol. 84, Issue 8 https://doi.org/10.1063/1.368644	journal	October 1998
Radiative Recombination in Type II GaSb/GaAs Quantum Dots Born, H.; M�ller-Kirsch, L.; Heitz, R. physica status solidi (b), Vol. 228, Issue 3 https://doi.org/10.1002/1521-3951(200112)228:33.0.CO;2-H	journal	December 2001
Carrier thermodynamics in $InAs ∕ {In}_{x} {Ga}_{1 - x} As$ quantum dots Sanguinetti, S.; Colombo, D.; Guzzi, M. Physical Review B, Vol. 74, Issue 20 https://doi.org/10.1103/PhysRevB.74.205302	journal	November 2006
Temperature dependence of the energy gap in semiconductors Varshni, Y. P. Physica, Vol. 34, Issue 1 https://doi.org/10.1016/0031-8914(67)90062-6	journal	January 1967
Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy Bittner, Zachary S.; Hellstroem, Staffan; Polly, Stephen J. Applied Physics Letters, Vol. 105, Issue 25 https://doi.org/10.1063/1.4904076	journal	December 2014

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Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP Yi, Xin; Xie, Shiyu; Liang, Baolai Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-27507-w	journal	June 2018
Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics Chatterjee, Arka; Panda, Debiprasad; Patwari, Jayita Semiconductor Science and Technology, Vol. 34, Issue 9 https://doi.org/10.1088/1361-6641/ab3487	journal	August 2019

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Title: Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells

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Title: Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs_0.56Sb _0.44 matrix for use in intermediate band solar cells