Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Journal Article · Thu Jan 07 04:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4939649· OSTI ID:22494868

Polyakov, A. Y. ^[1]; Smirnov, N. B. ^[1]; Yakimov, E. B. ^[1]; Lee, In-Hwan ^[2]; Pearton, S. J. ^[3]

---

1. National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation)
2. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
3. University of Florida, Gainesville, Florida 32611 (United States)

Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.

• OSTI ID: 22494868
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 119; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
DIFFUSION LENGTH
DISLOCATIONS
DOPED MATERIALS
ELECTRICAL PROPERTIES
FILMS
GALLIUM NITRIDES
LUMINESCENCE
RECOMBINATION
TRAPS
VAPOR PHASE EPITAXY