10 MeV electrons irradiation effects in variously doped n-GaN

Journal Article · Wed Jun 15 04:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3596819· OSTI ID:21538446

Polyakov, A Y; Lee, In-Hwan ^[1]; Smirnov, N B; Govorkov, A V; Kozhukhova, E A ^[2]; Kolin, N G; Korulin, A V; Boiko, V M ^[3]; Pearton, S J ^[4]

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1. School of Advanced Materials Engineering and Research Institute of Advanced Materials Development, Chonbuk National University, Chonju 561-756 (Korea, Republic of)
2. Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5 (Russian Federation)
3. Obninsk Branch of Federal State Unitary Enterprise, Karpov Institute of Physical Chemistry, 249033 Obninsk, Kaluga region, Kiev Avenue (Russian Federation)
4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

We studied 10 MeV electron irradiation effects in a group of n-GaN films grown by standard metalorganic chemical vapor deposition (MOCVD) and by epitaxial lateral overgrowth (ELOG) techniques. The samples were either undoped or Si-doped, so that the shallow donor concentrations ranged from 10{sup 14} cm{sup -3} to 3 x 10{sup 18} cm{sup -3}. It was found that electron irradiation led to the compensation of n-type conductivity and that the carrier removal rate substantially increased with an increase in the starting donor concentration. For the MOCVD samples, it was observed that the main compensating defect introduced by electrons was a 0.15 eV electron trap detected by admittance spectroscopy. Once the Fermi level crossed the level of these traps two other centers with activation energies of 0.2 and 1 eV were found to contribute to the compensation, so that after high doses, the Fermi level in moderately doped samples was pinned near E{sub c}-1 eV. In ELOG samples the 0.15 eV electron traps were not detected. Instead only the 0.2 and 1 eV traps were introduced by irradiation. The carrier removal rate in the ELOG n-GaN was found to be measurably lower than for MOCVD samples with a similar doping level. The results are compared to previously published data and possible models of compensation are discussed.

• OSTI ID: 21538446
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ALLOYS
BEAMS
CARRIERS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ENERGY
ENERGY LEVELS
ENERGY RANGE
EPITAXY
FERMI LEVEL
GALLIUM COMPOUNDS
GALLIUM NITRIDES
ISOTOPIC EXCHANGE
LAYERS
LEPTON BEAMS
MATERIALS
MEV RANGE
MEV RANGE 01-10
N-TYPE CONDUCTORS
NITRIDES
NITROGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON ADDITIONS
SILICON ALLOYS
SPECTROSCOPY
SURFACE COATING
TRAPS