Alpha particle detection with GaN Schottky diodes

Journal Article · Sun Nov 15 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3261806· OSTI ID:21361928

Polyakov, A Y; Smirnov, N B; Govorkov, A V; Markov, A V; Kozhukhova, E A; Gazizov, I M ^[1]; Kolin, N G; Merkurisov, D I; Boiko, V M; Korulin, A V ^[2]; Zalyetin, V M ^[3]; Pearton, S J ^[4]; Lee, I -H ^[5]; Dabiran, A M; Chow, P P ^[6]

---

1. Institute of Rare Metals, B. Tolmachevsky 5, Moscow 119017 (Russian Federation)
2. Obninsk Branch of Federal State Unitary Enterprise, Karpov Institute of Physical Chemistry, Kiev Avenue, Kaluga Region, Obninsk 249033 (Russian Federation)
3. Institute of Physical-Technical Problems, Dubna (Russian Federation)
4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
5. School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Chonju 561-756 (Korea, Republic of)
6. SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, Minnesota 55344 (United States)

Ni/GaN Schottky diode radiation detectors were fabricated on 3-mum-thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-mum-thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was <10{sup -9} A for bias voltages necessary for detector operation, with the level of background donor doping of <10{sup 15} cm{sup -3}. With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for alpha-particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly E{sub c}-0.6 eV traps, increased in MBE grown films.

• OSTI ID: 21361928
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALPHA DETECTION
ALPHA PARTICLES
CHARGE COLLECTION
CHARGED PARTICLE DETECTION
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DEPOSITION
DETECTION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EPITAXY
FERMIONS
FILMS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
IONIZING RADIATIONS
LAYERS
LEPTONS
MATERIALS
MEASURING INSTRUMENTS
METALS
MOLECULAR BEAM EPITAXY
NICKEL
NITRIDES
NITROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SPACE CHARGE
SURFACE COATING
THIN FILMS
TRANSITION ELEMENTS