P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394947

Yang, Z; Li, L K; Wang, W I ^[1]

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1. Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering

The electrical and luminescent properties of Mg-doped GaN films grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source have been investigated. Due to their different growth environments, the Mg-doped GaN films grown by MBE using ammonia exhibited properties that were different from similar films grown by metal-organic chemical vapor deposition (MOCVD). It has been found that the introduction of positive charges during growth is important in the achievement of p-type Mg-doped GaN grown by MBE using ammonia. With the introduction of a moderate nitrogen plasma, the authors have achieved p-type Mg-doped GaN films with a hole density of 4 {times} 10{sup 17} cm{sup {minus}3} and a mobility of 15 cm{sup 2}/V-s at room temperature.

• OSTI ID: 394947
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON CYCLOTRON-RESONANCE
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
FOURIER TRANSFORM SPECTROMETERS
GALLIUM NITRIDES
GAS FLOW
HALL EFFECT
INFRARED SPECTRA
LIGHT EMITTING DIODES
MAGNESIUM
PHOTOLUMINESCENCE
PLASMA
SEMICONDUCTOR MATERIALS