Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

Journal Article · Mon Sep 03 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4751108· OSTI ID:22080421

Hurni, Christophe A; Lang, Jordan R; Burke, Peter G; Speck, James S ^[1]

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1. Materials Department, University of California, Santa Barbara, 93106-5050 California (United States)

The hole concentration p in Mg-doped GaN films grown by ammonia molecular beam epitaxy depends strongly on the growth temperature T{sub GR}. At T{sub GR}=760 Degree-Sign C, GaN:Mg films showed a hole concentration of p=1.2 Multiplication-Sign 10{sup 18} cm{sup -3} for [Mg]=4.5 Multiplication-Sign 10{sup 19} cm{sup -3}, while at T{sub GR}=840 Degree-Sign C, p=4.4 Multiplication-Sign 10{sup 16} cm{sup -3} for [Mg]=7 Multiplication-Sign 10{sup 19} cm{sup -3}. Post-growth annealing did not increase p. The sample grown at 760 Degree-Sign C exhibited a low resistivity of 0.7 {Omega}cm. The mobility for all the samples was around 3-7 cm{sup 2}/V s. Temperature-dependent Hall measurements and secondary ion mass spectroscopy suggest that the samples grown at T{sub GR}>760 Degree-Sign C are compensated by an intrinsic donor rather than hydrogen.

• OSTI ID: 22080421
• Journal Information: Applied Physics Letters, Vol. 101, Issue 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMMONIA
ANNEALING
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
FILMS
GALLIUM NITRIDES
ION MICROPROBE ANALYSIS
LAYERS
MAGNESIUM
MAGNESIUM ADDITIONS
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
P-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K