Neutron doping effects in epitaxially laterally overgrown n-GaN

Journal Article · Mon May 23 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3593957· OSTI ID:21518457

Lee, In-Hwan; Polyakov, A Y ^[1]; Smirnov, N B; Govorkov, A V; Kozhukhova, E A ^[2]; Yakimov, E B ^[3]; Kolin, N G; Boiko, V M; Korulin, A V ^[4]; Pearton, S J ^[5]

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1. School of Advanced Materials Engineering, Research Institute of Advanced Materials Development, Chonbuk National University, Chonju 561-756 (Korea, Republic of)
2. Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation)
3. Institute of Microelectronics Technology RAS, Chernogolovka 142432 (Russian Federation)
4. Obninsk Branch of Federal State Unitary Enterprise, Karpov Institute of Physical Chemistry, Obninsk, Kaluga Region, 249033 Kiev Avenue (Russian Federation)
5. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.

• OSTI ID: 21518457
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
ANNEALING
BARYONS
CAPACITANCE
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DENSITY
DISLOCATIONS
EFFICIENCY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTARY PARTICLES
EPITAXY
FERMIONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HADRONS
HEAT TREATMENTS
INTERACTIONS
IRRADIATION
LINE DEFECTS
MATERIALS
MICROSCOPY
NEUTRONS
NITRIDES
NITROGEN COMPOUNDS
NUCLEONS
PHYSICAL PROPERTIES
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
THERMAL NEUTRONS
TRANSMUTATION