Microstructure of laterally overgrown GaN layers
Journal Article
·
· Journal of Applied Physics
- LBNL Library
Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- US Department of Energy; Air Force Office of Scientific Research. Order AFOSR-ISSA-00-0011; UK Engineering and Physical Sciences Research Council Grant GR/N16426 (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 835807
- Report Number(s):
- LBNL--47688
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 89
- Country of Publication:
- United States
- Language:
- English
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