Structural properties of laterally overgrown GaN
- and others
Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN substrates by hydride vapor phase epitaxy (HVPE) have been investigated. The epitaxially lateral overgrowth of GaN on SiO{sub 2} areas is realized and a planar ELO GaN film is obtained. Scanning electron microscope, transmission electron microscope (TEM) and atomic force microscope (AFM) are used to study the structure and surface morphology of the ELO GaN materials. AFM images indicate that no observable step termination is detected over a 4 {micro}m{sup 2} area in the ELO region. TEM observations indicate that the dislocation density is very flow in the ELO region. No void at the coalescence interface is observed. Lattice bending as high as 3.3{degree} is observed and attributed to pileup of threading dislocations coming from the underlying GaN seeding layer and tilting horizontally and quenching at the coalescence interface.
- Research Organization:
- Nanjing Univ. (CN)
- Sponsoring Organization:
- Office of Naval Research; National Science Foundation
- OSTI ID:
- 20104530
- Country of Publication:
- United States
- Language:
- English
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