Defect reduction in (112_O) a-plane GaN by two-stage epitaxiallateral overgrowth

Ni, X.; Ozgur, U.; Fu, Y.; Biyikli, N.; Xie, J.; Baski, A. A.; Morkoc, H.; Liliental-Weber, Z.

doi:10.1063/1.2423328

Defect reduction in (112_O) a-plane GaN by two-stage epitaxiallateral overgrowth

Journal Article · Fri Oct 20 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2423328· OSTI ID:918670

Ni, X.; Ozgur, U.; Fu, Y.; Biyikli, N.; Xie, J.; Baski, A. A.; Morkoc, H.; Liliental-Weber, Z.

In the epitaxial lateral overgrowth (ELO) of (11{bar 2}0) a-plane GaN, the uneven growth rates of two opposing wings, Ga- and N-wings, makes the coalescence of two neighboring wings more difficult than that in c-plane GaN. We report a two-stage growth method to get uniformly coalesced epitaxial lateral overgrown a-plane GaN using metalorganic chemical vapor deposition (MOCVD) by employing relatively lower growth temperature in the first step followed by enhanced lateral growth in the second. Using this method, the height differences between Ga-polar and N-polar wings at the coalescence front could be reduced, thereby making the coalescence of two wings much easier. Transmission electron microscopy (TEM) showed that the threading dislocation density in the wing areas was 1.0x10{sup 8}cm{sup -2}, more than two orders of magnitude lower than that in the window areas (4.2x10{sup 10}cm{sup -2}). However, high density of basal stacking faults of 1.2x104 cm-1 was still observed in the wing areas as compared to c-plane GaN. Atomic force microscopy and photoluminescence measurements on the coalesced ELO a-GaN sample also indicated improved material quality.

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Research Organization:: COLLABORATION - Virginia CommonwealthU.

Sponsoring Organization:: USDOE. Office of the Chief Financial OfficerAssistantSecretary Range: 400000000 - 40ZZZZZZZ. Cost of Reimbursable Work andCooperative Work -Other Federal Entities, Cost of Reimbursable Work andCooperative Work -Other Federal Entities; AFOSR-ISSA-06NE-0011

DOE Contract Number:: AC02-05CH11231

OSTI ID:: 918670

Report Number(s):: LBNL--62926; BnR: 400403109

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 89; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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