Vibrational properties of epitaxial Bi{sub 4}Te{sub 3} films as studied by Raman spectroscopy

Journal Article · Sat Aug 15 04:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4928217· OSTI ID:22492287

Xu, Hao; Pan, Wenwu; Chen, Qimiao; Wu, Xiaoyan ^[1]; Song, Yuxin; Gong, Qian ^[1]; Lu, Pengfei ^[2]; Wang, Shumin ^[1]

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1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)
2. State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China)

Bi{sub 4}Te{sub 3}, as one of the phases of the binary Bi–Te system, shares many similarities with Bi{sub 2}Te{sub 3}, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi{sub 4}Te{sub 3} films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi{sub 4}Te{sub 3} films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi{sub 4}Te{sub 3} films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi{sub 4}Te{sub 3} films, it is found that the Raman-active phonon oscillations in Bi{sub 4}Te{sub 3} films exhibit the vibrational properties of those in both Bi and Bi{sub 2}Te{sub 3} films.

• OSTI ID: 22492287
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 8 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BINARY ALLOY SYSTEMS
BISMUTH ALLOYS
BISMUTH TELLURIDES
FILMS
MOLECULAR BEAM EPITAXY
OSCILLATIONS
PHASE STABILITY
PHASE STUDIES
PHONONS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SUBSTRATES
TELLURIUM ALLOYS
TENSORS
THERMOELECTRIC MATERIALS