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Surface phonons in the topological insulators Bi2Se3 and Bi2Te3

Journal Article · · Solid State Communications
 [1];  [1];  [1];  [2];  [1];  [1]
  1. University of Michigan, Ann Arbor, MI (United States)
  2. University of Pardubice (Czech Republic)
Raman scattering, inelastic helium scattering and photoemission experiments on the topological insulators Bi2Se3 and Bi2Te3 show features in the range ~ 50–160 cm-1, which have been assigned alternatively to Raman-forbidden, bulk infrared modes arising from symmetry breaking at the surface or to surface phonons, which couple to the topologically protected electronic states. We present temperature- and wavelength- dependent Raman studies showing additional modes we ascribe to surface phonons in both Bi2Se3 and Bi2Te3. Our assignment is supported by density functional theory calculations revealing surface phonons at frequencies close to those of the extra peaks in the Raman data. The theoretical results also indicate that these modes are not a consequence of spin-orbit coupling and, thus, that their occurrence is unrelated to the topological properties of these materials.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center; University of Michigan, Ann Arbor, MI (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE; USDOE Office of Science (SC)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1479000
Alternate ID(s):
OSTI ID: 1548994
Journal Information:
Solid State Communications, Journal Name: Solid State Communications Journal Issue: C Vol. 271; ISSN 0038-1098
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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