Structural properties of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Journal Article · Mon Oct 24 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3655995· OSTI ID:22027784

Liu, X; Leiner, J; Dobrowolska, M; Furdyna, J K ^[1]; Smith, D J ^[2]; Fan, J ^[2]; Zhang, Y -H ^[3]; Cao, H; Chen, Y P ^[4]; Kirby, B J ^[5]

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1. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
2. Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
3. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)
4. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
5. Center for Neutron Research, NIST, Gaithersburg, Maryland 20899 (United States)

Thin films of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

• OSTI ID: 22027784
• Journal Information: Applied Physics Letters, Vol. 99, Issue 17; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH ALLOYS
BISMUTH SELENIDES
BISMUTH TELLURIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
FERROMAGNETISM
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
RAMAN SPECTRA
SELENIUM ALLOYS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TELLURIUM ALLOYS
THIN FILMS
TOPOLOGY
TRANSMISSION ELECTRON MICROSCOPY