Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · AIP Advances

DOI:https://doi.org/10.1063/1.4815972· OSTI ID:22220491

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. ^[1]; Fan, Dongsheng; Yu, Shuiqing ^[1]; Zhao, Yanfei ^[2]; Lee, Joon Sue ^[3]; Wang, Jian ^[2]; Wang, Zhiming M. ^[1]

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1. Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States)
2. International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China)
3. The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States)

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

• OSTI ID: 22220491
• Journal Information: AIP Advances, Vol. 3, Issue 7; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY ALLOYS
ANTIMONY TELLURIDES
ATOMIC FORCE MICROSCOPY
BISMUTH ALLOYS
BISMUTH TELLURIDES
ELECTRON DIFFRACTION
FILMS
GALLIUM ARSENIDES
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TELLURIUM ALLOYS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION