Highly tunable electron transport in epitaxial topological insulator (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films
- Institute of Physics, Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Atomically smooth, single crystalline (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} films have been grown on SrTiO{sub 3}(111) substrates by molecular beam epitaxy. A full range of Sb-Bi compositions have been studied in order to obtain the lowest possible bulk conductivity. For the samples with optimized Sb compositions (x=0.5{+-}0.1), the carrier type can be tuned from n-type to p-type across the whole thickness with the help of a back-gate. Linear magnetoresistance has been observed at gate voltages close to the maximum in the longitudinal resistance of a (Bi{sub 0.5}Sb{sub 0.5}){sub 2}Te{sub 3} sample. These highly tunable (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films provide an excellent platform to explore the intrinsic transport properties of the three-dimensional topological insulators.
- OSTI ID:
- 22080451
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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