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Title: Fabrication of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayered thin film-based integrated cooling devices

Journal Article · · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
DOI:https://doi.org/10.1116/1.3292600· OSTI ID:22053728
; ; ;  [1]
  1. Department of Electrical Engineering, Alabama A and M University, Normal, Alabama 35762 (United States)

In this article, the authors report on the development of solid-state integrated cooling devices using Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se thermoelectric thin films fabricated using sputtering deposition. The multilayer thin films have a periodic structure consisting of alternating Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} layers or Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 2}Se layers, where each layer is about 10 nm thick. The deposited Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} multilayer thin film has a p-type conductivity and the deposited Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film has an n-type conductivity. The multilayer structure of films and the interface of layers were analyzed by x-ray diffraction and reflectivity. Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film-based integrated cooling devices were fabricated using standard integrated circuit fabrication process. The temperature difference was measured from the fabricated cooling devices. The devices could be good candidates for the application of high-efficiency solid-state microcooling.

OSTI ID:
22053728
Journal Information:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
Country of Publication:
United States
Language:
English