Fabrication of Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2Se multilayered thin film-based integrated cooling devices
In this article, the authors report on the development of solid-state integrated cooling devices using Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se thermoelectric thin films fabricated using sputtering deposition. The multilayer thin films have a periodic structure consisting of alternating Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} layers or Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 2}Se layers, where each layer is about 10 nm thick. The deposited Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} multilayer thin film has a p-type conductivity and the deposited Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film has an n-type conductivity. The multilayer structure of films and the interface of layers were analyzed by x-ray diffraction and reflectivity. Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film-based integrated cooling devices were fabricated using standard integrated circuit fabrication process. The temperature difference was measured from the fabricated cooling devices. The devices could be good candidates for the application of high-efficiency solid-state microcooling.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 989169
- Report Number(s):
- BNL-93990-2010-JA; R&D Project: LS001; KC0401030; TRN: US201019%%379
- Journal Information:
- Journal of Vacuum Science and Technology A, Vol. 28, Issue 4; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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