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Fabrication of Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2Se multilayered thin film-based integrated cooling devices

Journal Article · · Journal of Vacuum Science and Technology A
DOI:https://doi.org/10.1116/1.3292600· OSTI ID:989169
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In this article, the authors report on the development of solid-state integrated cooling devices using Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se thermoelectric thin films fabricated using sputtering deposition. The multilayer thin films have a periodic structure consisting of alternating Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} layers or Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 2}Se layers, where each layer is about 10 nm thick. The deposited Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} multilayer thin film has a p-type conductivity and the deposited Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film has an n-type conductivity. The multilayer structure of films and the interface of layers were analyzed by x-ray diffraction and reflectivity. Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}/Bi{sub 2}Te{sub 2}Se multilayer thin film-based integrated cooling devices were fabricated using standard integrated circuit fabrication process. The temperature difference was measured from the fabricated cooling devices. The devices could be good candidates for the application of high-efficiency solid-state microcooling.
Research Organization:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Organization:
Doe - Office Of Science
DOE Contract Number:
AC02-98CH10886
OSTI ID:
989169
Report Number(s):
BNL--93990-2010-JA; KC0401030
Journal Information:
Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 4 Vol. 28; ISSN 0734-2101
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
FABRICATION
INTEGRATED CIRCUITS
REFLECTIVITY
SPUTTERING
THIN FILMS
X-RAY DIFFRACTION
national synchrotron light source