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The fabrication of nanoscale Bi2Te3/Sb2Te3 multilayer thin film-based thermoelectric power chips

Journal Article · · Microelectronic Engineering
 [1];  [2];  [3];  [1]
  1. Alabama A&M University, Normal, AL (United States). Department of Electrical Engineering
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
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In this work, we report our method of fabricating nanoscale multilayered Bi2Te3/Sb2Te3 thin film-based integrated thermoelectric devices, and detail the voltage and power produced by the device. The multilayered Bi2Te3/Sb2Te3 thin film was grown via e-beam evaporation; it had 20 alternating Bi2Te3- and Sb2Te3-layers, each layer being 1.5 nm thick. We characterized the film using high-resolution transmission electron microscopy (HRTEM), revealing its excellent cross-sectional structure without any obvious interface defects. The Bi2Te3/Sb2Te3 multilayer films were investigated by synchrotron x-ray scattering. An integrated device including 128×256 thermoelectric elements was fabricated from the multilayered film. An open-circuit voltage of 51 mV and a maximum power of 21 nW were produced from this 30 nm-thick Bi2Te3/Sb2Te3 multilayer TE device. We found that the nanoscale multilayer structure significantly affects the voltage and power produced. Lastly, the fabrication of the integrated thermoelectric devices is compatible to that of generating standard integrated circuits (ICs), and is scalable for producing higher voltage and power, or achieving solid-state cooling for on-chip applications.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0012704; AC02-98CH10886
OSTI ID:
1473637
Alternate ID(s):
OSTI ID: 1548227
Report Number(s):
BNL--209068-2018-JAAM
Journal Information:
Microelectronic Engineering, Journal Name: Microelectronic Engineering Journal Issue: C Vol. 197; ISSN 0167-9317
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

Figures / Tables (8)

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Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
Bi2Te3/Sb2Te3 multilayer thin films
Microfabrication
Thermoelectric device
nanofabrication
thermoelectric power
thin films