Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

Journal Article · Tue Dec 15 00:00:00 EST 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4937127· OSTI ID:22492214

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Chen, Zhibin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue ^[1]

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1. School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi’an, China 710071 (China)

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.

• OSTI ID: 22492214
• Journal Information: AIP Advances, Vol. 5, Issue 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
DEPLETION LAYER
ELECTRICAL PROPERTIES
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
HALL EFFECT
INDIUM COMPOUNDS
INTERFACES
MICROWAVE RADIATION
MORPHOLOGY
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
X-RAY DIFFRACTION