Oxygen ion irradiation on AlGaN/GaN heterostructure grown on silicon substrate by MOCVD method
- Crystal Growth Centre, Anna University Chennai-600025 (India)
- Inter University Accelerator Centre, New Delhi- 110 067 (India)
In the present work, we have reported 100 MeV O{sup 7+} ion irradiation with 1×10{sup 12} and 5×10{sup 12} ions/cm{sup 2} fluence on AlGaN/GaN heterostructures grown on silicon substrate by Metal Organic Chemical Vapour Deposition (MOCVD). The Irradiated samples were characterized by High Resolution X-Ray Diffraction (HRXRD), Atomic Force Microscope (AFM) and Photoluminescence (PL). Crystalline quality has been analysed before and after irradiation using HRXRD. Different kinds of morphology are attributed to specific type of dislocations using the existing models available in the literature. A sharp band-edge emission in the as grown samples was observed at ∼3.4 eV in GaN and 3.82 for AlGaN. The band-edge absorption intensity reduced due to irradiation and these results have been discussed in view of the damage created by the incident ions. In general the effect of irradiation induced-damages were analysed as a function of material properties. A possible mechanism responsible for the observations has been discussed.
- OSTI ID:
- 22490545
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
DISLOCATIONS
EV RANGE
GALLIUM NITRIDES
ION BEAMS
IRRADIATION
MORPHOLOGY
MULTICHARGED IONS
ORGANOMETALLIC COMPOUNDS
OXYGEN IONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
SILICON
SUBSTRATES
X-RAY DIFFRACTION