Structural and optical properties of AlGaN/GaN quantum well structures grown by MOCVD on sapphire
Book
·
OSTI ID:585816
- Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Freiburg (Germany); and others
AlGaN/GaN single quantum wells (QW) have been grown on 2 in. sapphire substrates (c-plane) by metal-organic chemical vapor deposition (MOCVD). The well width was varied between 20 and 40 {angstrom} for barriers containing 4% and 16% of aluminum. Cathodoluminescence (CL) and Photoluminescence (PL) spectra of the samples show, as expected, a shift of the quantum well emission to higher energies with decreasing well width, whereas the barrier luminescence stays at constant energy. Examination of the QWs by resonant Raman spectroscopy tuned to the gap of the well, clearly shows the GaN A{sub 1}(LO) phonon besides the AlGaN A{sub 1}(LO) phonon from the barrier. For a well width of 20 {angstrom} the authors observe a shift of the A{sub 1}(LO) GaN phonon indicating a certain degree of intermixing at the GaN/AlGaN interface. Atomic Force Microscopy (AFM) reveals that the layers are growing in a 2-dimensional step flow growth mode with step heights of 3 and 6 {angstrom} corresponding to mono- and biatomic steps. High Resolution Transmission Electron Microscopy (HRTEM) micrographs of the 40 {angstrom} well show a very low interface roughness of 1--2 atomic layers.
- OSTI ID:
- 585816
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells
MOCVD growth of AlGaN UV LEDs
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers
Journal Article
·
Mon Sep 14 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22482083
MOCVD growth of AlGaN UV LEDs
Technical Report
·
Tue Sep 01 00:00:00 EDT 1998
·
OSTI ID:658459
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers
Journal Article
·
Tue Jan 06 23:00:00 EST 2015
· Journal of Crystal Growth
·
OSTI ID:1426883