Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4931096· OSTI ID:22482083
 [1];  [1];  [1]
  1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing doping density. As the doping density was increased from 6.6 × 10{sup 11} to 6.0 × 10{sup 12 }cm{sup −2} per a quantum well, the intersubband absorption peak energy shifted from 274.0 meV to 302.9 meV, and the full width at half maximum increased from 56.4 meV to 112.4 meV. Theoretical calculations reveal that the blue shift is due to many body effects, and the intersubband linewidth in doped AlGaN/GaN QW is mainly determined by scattering due to interface roughness, LO phonons, and ionized impurities.
OSTI ID:
22482083
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 107; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

Similar Records

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells
Journal Article · Mon Jul 14 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:22311065

Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells
Journal Article · Sun Jan 31 23:00:00 EST 2016 · Applied Physics Letters · OSTI ID:22489404

Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
Journal Article · Mon Sep 03 00:00:00 EDT 2012 · Applied Physics Letters · OSTI ID:22080420