Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells

Journal Article · Mon Feb 01 04:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4941088· OSTI ID:22489404

Kotani, Teruhisa ^[1]; Arita, Munetaka ^[1]; Hoshino, Katsuyuki ^[2]; Arakawa, Yasuhiko ^[1]

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1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
2. Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

The temperature dependence of the mid-infrared intersubband (ISB) absorption in non-polar (m-plane) and polar (c-plane) AlGaN/GaN quantum wells (QWs) is studied. The ISB absorption shifts to higher energy as the temperature is reduced from 300 K to below 10 K. Both m-plane and c-plane QWs show a small energy shift (1.6–2.6 meV) compared to AlGaAs/GaAs (3.5–5.2 meV) and AlSb/InAs (6.2 and 12 meV) QWs. Theoretical calculations considering the temperature induced material constant changes show good agreement with the experimental results. These results suggest that ISB transition energies in AlGaN/GaN QWs are more stable against temperature change mainly because of the heavy effective masses and small nonparabolicities.

• OSTI ID: 22489404
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
INDIUM ARSENIDES
QUANTUM WELLS
TEMPERATURE DEPENDENCE