Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

Journal Article · Mon Sep 03 04:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4751040· OSTI ID:22080420

Edmunds, C; Cervantes, M; Malis, O ^[1]; Tang, L; Shao, J; Li, D ^[1]; Gardner, G ^[2]; Zakharov, D N ^[2]; Manfra, M J ^[1]

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1. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
2. Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States)

We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without {delta}-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the {delta}-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy.

• OSTI ID: 22080420
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 101; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM COMPOUNDS
DISTRIBUTION
GALLIUM NITRIDES
INFRARED SPECTRA
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
REDUCTION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY