Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

Shirazi-HD, M.; Turkmeneli, K.; Liu, S.; Dai, S.; Edmunds, C.; Shao, J.; Gardner, G.; Zakharov, D. N.; Manfra, M. J.; Malis, O.

doi:10.1063/1.4944847

Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

Journal Article · Thu Mar 24 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944847· OSTI ID:1420603

Shirazi-HD, M.; ; ; Dai, S.; Edmunds, C.; Shao, J.; Gardner, G.; Zakharov, D. N.; Manfra, M. J.; Malis, O.

We report substantial improvement of near-infrared (2–2.6 μm) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 °C, as well as by judiciously placing the charge into two delta-doping sheets. Structural characterization suggests that AlInN crystal quality is enhanced and interface roughness is reduced. Importantly, near-infrared absorption data indicate that the optical quality of the AlInN/GaN superlattices is now comparable with that of AlN/GaN superlattices designed to exploit near-infrared intersubband transitions.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704

OSTI ID:: 1420603

Alternate ID(s):: OSTI ID: 22591460

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 108; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (20)

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications Collazo, Ramón; Mita, Seiji; Xie, Jinqiao physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201000964	journal	May 2011
Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates Edmunds, C.; Tang, L.; Li, D. Journal of Electronic Materials, Vol. 41, Issue 5 https://doi.org/10.1007/s11664-011-1881-9	journal	February 2012
Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Hardy, M. T.; Storm, D. F.; Nepal, N. Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.02.045	journal	September 2015
High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors Mitrofanov, O.; Schmult, S.; Manfra, M. J. Applied Physics Letters, Vol. 88, Issue 17 https://doi.org/10.1063/1.2195547	journal	April 2006
Observation of vertical honeycomb structure in InAlN∕GaN heterostructures due to lateral phase separation Zhou, Lin; Smith, David J.; McCartney, Martha R. Applied Physics Letters, Vol. 90, Issue 8 https://doi.org/10.1063/1.2696206	journal	February 2007
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy Fernández-Garrido, S.; Gačević, Ž.; Calleja, E. Applied Physics Letters, Vol. 93, Issue 19 https://doi.org/10.1063/1.3026541	journal	November 2008
Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices Malis, O.; Edmunds, C.; Manfra, M. J. Applied Physics Letters, Vol. 94, Issue 16 https://doi.org/10.1063/1.3120551	journal	April 2009
Optical properties of GaN quantum dots Ramvall, Peter; Riblet, Philippe; Nomura, Shintaro Journal of Applied Physics, Vol. 87, Issue 8 https://doi.org/10.1063/1.372429	journal	April 2000
Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy Choi, Soojeong; Wu, Feng; Shivaraman, Ravi Applied Physics Letters, Vol. 100, Issue 23 https://doi.org/10.1063/1.4725482	journal	June 2012
Repeatable low-temperature negative-differential resistance from Al _0.18 Ga _0.82 N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates Li, D.; Tang, L.; Edmunds, C. Applied Physics Letters, Vol. 100, Issue 25 https://doi.org/10.1063/1.4729819	journal	June 2012
Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location Edmunds, C.; Tang, L.; Shao, J. Applied Physics Letters, Vol. 101, Issue 10 https://doi.org/10.1063/1.4751040	journal	September 2012
Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells Edmunds, C.; Shao, J.; Shirazi-HD, M. Applied Physics Letters, Vol. 105, Issue 2 https://doi.org/10.1063/1.4890611	journal	July 2014
III-nitride semiconductors for intersubband optoelectronics: a review Beeler, M.; Trichas, E.; Monroy, E. Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074022	journal	June 2013
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Kaun, Stephen W.; Ahmadi, Elaheh; Mazumder, Baishakhi Semiconductor Science and Technology, Vol. 29, Issue 4 https://doi.org/10.1088/0268-1242/29/4/045011	journal	February 2014
Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells Tchernycheva, M.; Nevou, L.; Doyennette, L. Physical Review B, Vol. 73, Issue 12 https://doi.org/10.1103/PhysRevB.73.125347	journal	March 2006
Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities Edmunds, C.; Tang, L.; Cervantes, M. Physical Review B, Vol. 88, Issue 23 https://doi.org/10.1103/PhysRevB.88.235306	journal	December 2013
Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN Py, Marcel A.; Lugani, Lorenzo; Taniyasu, Yoshitaka Physical Review B, Vol. 90, Issue 11 https://doi.org/10.1103/PhysRevB.90.115208	journal	September 2014
Charge-Induced Coherence between Intersubband Plasmons in a Quantum Structure Delteil, A.; Vasanelli, A.; Todorov, Y. Physical Review Letters, Vol. 109, Issue 24, Article No. 246808 https://doi.org/10.1103/PhysRevLett.109.246808	journal	December 2012
nextnano: General Purpose 3-D Simulations Birner, S.; Zibold, T.; Andlauer, T. IEEE Transactions on Electron Devices, Vol. 54, Issue 9 https://doi.org/10.1109/TED.2007.902871	journal	September 2007
Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy Chen, Zhitao; Fujita, Kazuhisa; Ichikawa, Junki Japanese Journal of Applied Physics, Vol. 50, Issue 8R https://doi.org/10.7567/JJAP.50.081001	journal	August 2011

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