Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition

Journal Article · Mon Apr 13 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917559· OSTI ID:22398895

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Zhao, Yi; Zhang, Jinfeng; Chen, Dazheng; Zhang, Jincheng; Hao, Yue ^[1]

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1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071 (China)

The effects of AlN interlayer growth condition on the properties of InAlN/InGaN heterostructures are investigated in detail. Since the properties of InGaN channel are different from the traditional GaN channel, two-step AlN interlayer is proposed, which is proven to be more suitable for the InGaN channel heterostructures than the interlayers grown at constant temperature. Test results show that two-step AlN interlayer can not only significantly improve the interface morphology between the InGaN channel and barrier layers but also make an effective protection of the high-quality InGaN channel. The electron mobility of the InAlN/InGaN heterostructure with two-step AlN interlayer achieves 890 cm{sup 2}/V s with a high two-dimensional-electron-gas density of 1.78 × 10{sup 13 }cm{sup −2}. The gratifying results indicate that the InGaN channel heterostructure with two-step interlayer is a promising candidate for microwave power devices.

• OSTI ID: 22398895
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEPLETION LAYER
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
MICROWAVE RADIATION
MORPHOLOGY
ORGANOMETALLIC COMPOUNDS
SAPPHIRE
TWO-DIMENSIONAL SYSTEMS