Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903293· OSTI ID:22402440

Zhao, Yi; Xue, JunShuai; Zhang, JinCheng; Hao, Yue ^[1]

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1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)

InAlN/InGaN/AlGaN double heterostructures were grown and characterized. Temperature-dependent Hall measurements show that the two-dimensional electron gas has a steady density over the entire temperature range tested and a superior transport property compared with the traditional InAlN/GaN single heterostructure at elevated temperatures. The improved performance was attributed to the back barrier, which enhanced the carrier confinement and prevented electrons from spilling into the buffer. In addition, the room-temperature electron mobility of the double heterostructure was 1293 cm{sup 2}/Vs, which is the highest reported for an InGaN-channel heterostructure.

• OSTI ID: 22402440
• Journal Information: Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
HALL EFFECT
INDIUM COMPOUNDS
ORGANOMETALLIC COMPOUNDS
TEMPERATURE RANGE 0273-0400 K