Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

Journal Article · Fri Aug 28 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4929246· OSTI ID:22488839

Patel, Piyush; Patel, Vimal; Pavagadhi, Himanshu ^[1]; Solanki, Mitesh ^[2]; Jani, Maunik P. ^[3]

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1. Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India)
2. panditdindayal Petroleum University, Gandhinagar. Gujarat (India)
3. BITS Edu Campus, Varnama, Vadodara, Gujarat (India)

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

• OSTI ID: 22488839
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1675; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANTIMONIDES
BRIDGMAN METHOD
CRYSTAL GROWTH
HETEROJUNCTIONS
INDIUM SELENIDES
LATTICE PARAMETERS
LAYERS
MICROHARDNESS
MONOCRYSTALS
RADIATION DETECTORS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLIDS
SURFACES
TEMPERATURE GRADIENTS
VICKERS HARDNESS
X-RAY DIFFRACTION