Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers

Journal Article · Tue Sep 15 04:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609090061· OSTI ID:21562409

Bodnar, I V ^[1]; Ilchuk, G A; Petrus', R Yu ^[2]; Rud', Yu V ^[3]; Serginov, M ^[4]

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1. Belarussian State University of Informatics and Radioelectronics (Belarus)
2. National University 'Lvivs'ka Polytechnika' (Ukraine)
3. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
4. Turkmenian State University (Turkmenistan)

In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

• OSTI ID: 21562409
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRIDGMAN METHOD
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRICAL PROPERTIES
ENERGY-LEVEL TRANSITIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
MONOCRYSTALS
PHOTOELECTRIC EFFECT
PHOTOSENSITIVITY
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SENSITIVITY
SPECTRA