Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers
- Belarussian State University of Informatics and Radioelectronics (Belarus)
- National University 'Lvivs'ka Polytechnika' (Ukraine)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- Turkmenian State University (Turkmenistan)
In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.
- OSTI ID:
- 21562409
- Journal Information:
- Semiconductors, Vol. 43, Issue 9; Other Information: DOI: 10.1134/S1063782609090061; Copyright (c) 2009 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BRIDGMAN METHOD
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ENERGY-LEVEL TRANSITIONS
INDIUM SELENIDES
MONOCRYSTALS
PHOTOSENSITIVITY
PHOTOVOLTAIC EFFECT
SPECTRA
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTALS
INDIUM COMPOUNDS
PHOTOELECTRIC EFFECT
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SENSITIVITY