Photoelectric phenomena in the Cu (Al, In)/p-CuIn{sub 3}Se{sub 5} Schottky barriers

Journal Article · Mon Jan 15 00:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607010101· OSTI ID:21088462

Rud', Yu V ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Structures are formed on the p-CuIn{sub 3}Se{sub 5} crystals and photoelectric phenomena in the Cu/p-CuIn{sub 3}Se{sub 5}, Al/p-CuIn{sub 3}Se{sub 5}, and In/p-CuIn{sub 3}Se{sub 5} Schottky barriers are studied. The spectra of quantum efficiency for photoconversion in new structures were obtained for the first time. The characteristics of the interband transitions are discussed, and the CuIn{sub 3}Se{sub 5} band gap is determined. It is concluded that CuIn{sub 3}Se{sub 5} crystals can be used in the fabrication of high-efficiency broadband photoconverters of optical radiation.

• OSTI ID: 21088462
• Journal Information: Semiconductors, Vol. 41, Issue 1; Other Information: DOI: 10.1134/S1063782607010101; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
COPPER
COPPER SELENIDES
CRYSTALS
ENERGY-LEVEL TRANSITIONS
FABRICATION
INDIUM
INDIUM SELENIDES
PHOTOELECTRIC EFFECT
QUANTUM EFFICIENCY
SPECTRA