Properties of CuIn{sub 3}Se{sub 5} crystals and In/CuIn{sub 3}Se{sub 5} structures
- St. Petersburg State Polytechnical University (Russian Federation)
Using the method of planar crystallization from the melt with deviations from the stoichiometric composition, p-CuIn{sub 3}Se{sub 5} single crystals are grown. The electrical properties of the homogeneous crystals are studied. It is found that the resistivity of the p-CuIn{sub 3}Se{sub 5} crystals depends on the excess Se content in the melt. It is established that the voltaic photosensitivity of the In/CuIn{sub 3}Se{sub 5} structures is enhanced with an increasing excess of Se content in the melt. The energy spectrum and the character of interband transitions in the CuIn{sub 3}Se{sub 5} crystals are discussed. It is concluded that the CuIn{sub 3}Se{sub 5} ternary compound can be used in high efficiency photoelectric converters of solar radiation.
- OSTI ID:
- 21087969
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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