Photoelectric properties of In/In{sub 2}Se{sub 3} structures

Journal Article · Mon Jan 15 00:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607010125· OSTI ID:21088460

Il'chuk, G A; Kus'nezh, V V; Petrus', R Yu ^[1]; Rud', Yu V ^[2]; Ukrainets, V O ^[1]

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1. National University Lvivska Politekhnika (Ukraine)
2. Russian Academy of Sciences, Ioffe Physicotechnucal Institute (Russian Federation)

The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.

• OSTI ID: 21088460
• Journal Information: Semiconductors, Vol. 41, Issue 1; Other Information: DOI: 10.1134/S1063782607010125; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

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