Photoelectric properties of In/In{sub 2}Se{sub 3} structures
- National University Lvivska Politekhnika (Ukraine)
- Russian Academy of Sciences, Ioffe Physicotechnucal Institute (Russian Federation)
The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.
- OSTI ID:
- 21088460
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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