Epitaxial Cu{sub 2}ZnSnS{sub 4} thin film on Si (111) 4° substrate

Journal Article · Mon Jun 22 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922992· OSTI ID:22482012

Song, Ning; Liu, Fangyang; Huang, Yidan; Hao, Xiaojing; Green, Martin A. ^[1]; Young, Matthew; Erslev, Pete; Harvey, Steven P.; Teeter, Glenn ^[2]; Wilson, Samual ^[3]

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1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)
2. National Renewable Energy Laboratory, Golden, Colorado 80403 (United States)
3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

To explore the possibility of Cu{sub 2}ZnSnS{sub 4} (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu{sub 2}ZnSnS{sub 4} thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

• OSTI ID: 22482012
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DIFFRACTION
IMAGES
INTERFACES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
P-N JUNCTIONS
PHOTOVOLTAIC EFFECT
RESOLUTION
SOLAR CELLS
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION