Epitaxial orientation of Mg{sub 2}Si(110) thin film on Si(111) substrate
Journal Article
·
· Journal of Applied Physics
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China) and School of Engineering, University of Queensland, St. Lucia QLD 4072 (Australia)
Epitaxial Mg{sub 2}Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111) parallel Mg{sub 2}Si(110) and Si<110> parallel Mg{sub 2}Si<110> has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg{sub 2}Si film in a MgO/Mg{sub 2}Si/Si double heterostructure.
- OSTI ID:
- 21057564
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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