Heteroepitaxial growth of Cu{sub 2}ZnSnS{sub 4} thin film on sapphire substrate by radio frequency magnetron sputtering

Journal Article · Mon Mar 03 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867093· OSTI ID:22283071

Song, Ning; Huang, Yidan; Li, Wei; Huang, Shujuan; Hao, Xiaojing ^[1]; Wang, Yu ^[2]; Hu, Yicong ^[3]

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1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)
2. Mark Wainwright Analytical Center, University of New South Wales, Sydney, NSW 2052 (Australia)
3. Department of Materials Science and Engineering, Xiamen University, Xiamen 361005, Fujian Province (China)

The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) ‖ sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201{sup ¯}] ‖ sapphire [21{sup ¯}1{sup ¯}0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

• OSTI ID: 22283071
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER COMPOUNDS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
ENERGY GAP
EPITAXY
INTERFACES
MONOCRYSTALS
RADIOWAVE RADIATION
ROUGHNESS
SAPPHIRE
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
TIN SULFIDES
TRANSMISSION ELECTRON MICROSCOPY
ZINC COMPOUNDS