Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

Journal Article · Sun Dec 28 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905028· OSTI ID:22399159

Zhang, Xiaozhi; Yue, Zhenxing; Meng, Siqin; Yuan, Lixin ^[1]

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1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

• OSTI ID: 22399159
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 24 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANISOTROPY
ANNEALING
BARIUM COMPOUNDS
CRYSTAL STRUCTURE
DIRECT CURRENT
EPITAXY
FERRITES
HEMATITE
HYSTERESIS
IRON OXIDES
MAGNETIC PROPERTIES
MAGNETRONS
SAPPHIRE
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION