Growth and Characterization of Sputtered BSTO/BaM Multilayers
Journal Article
·
· Journal of Applied Physics
- University of South Florida, Tampa
- University of Central Florida, Orlando
- ORNL
Multilayers of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BSTO) and BaFe{sub 12}O{sub 19} (BaM), with tunable permeability and permittivity are attractive systems for radio frequency and microwave applications. We have grown multilayers of BSTO and BaM using magnetron sputtering on Al{sub 2}O{sub 3} substrates. Film growth conditions such as sputtering parameters were optimized to obtain high quality multilayers. X-ray diffraction established that both BSTO and BaM were formed and cross-sectional SEM studies showed sharp interfaces between BSTO and BaM layers. Magnetization showed a large coercivity ( {approx}2000 Oe) consistent with the hexaferrite component. The hysteresis loops also revealed the distinct influence of magnetocrystalline and shape anisotropies at different temperatures.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1003095
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 97; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANISOTROPY
BARIUM COMPOUNDS
COERCIVE FORCE
DEPOSITION
FERRITE
GRAIN GROWTH
GRAIN SIZE
GROWTH
INTERFACES
LAYERS
MAGNETIC PROPERTIES
MAGNETIC SUSCEPTIBILITY
MAGNETIZATION
MAGNETRONS
PERMANENT MAGNETS
SCANNING ELECTRON MICROSCOPY
SPUTTERING
STRONTIUM COMPOUNDS
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
GENERAL PHYSICS
ANISOTROPY
BARIUM COMPOUNDS
COERCIVE FORCE
DEPOSITION
FERRITE
GRAIN GROWTH
GRAIN SIZE
GROWTH
INTERFACES
LAYERS
MAGNETIC PROPERTIES
MAGNETIC SUSCEPTIBILITY
MAGNETIZATION
MAGNETRONS
PERMANENT MAGNETS
SCANNING ELECTRON MICROSCOPY
SPUTTERING
STRONTIUM COMPOUNDS
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION