Epitaxial growth and magnetic properties of Fe{sub 3}O{sub 4} films on TiN buffered Si(001), Si(110), and Si(111) substrates
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Epitaxial Fe{sub 3}O{sub 4} thin films were grown on TiN buffered Si(001), Si(110), and Si(111) substrates by dc reactive sputtering deposition. Both Fe{sub 3}O{sub 4} films and TiN buffer are fully epitaxial when grown at substrate temperatures above 150 deg. C, with textured single phase Fe{sub 3}O{sub 4} resulting from room temperature growth. The initial sputtered Fe{sub 3}O{sub 4} formed nuclei islands and then coalesced to epitaxial columnar grains with increasing film thickness. The magnetization decreases and the coercive field increases with decreasing film thickness. There is no in-plane magnetic anisotropy of epitaxial Fe{sub 3}O{sub 4}(001) on Si(001) but Fe{sub 3}O{sub 4} films grown on Si(110) and Si(111) substrates show uniaxial in-plane magnetic anisotropy.
- OSTI ID:
- 21466913
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 9; Other Information: DOI: 10.1063/1.3484278; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
COERCIVE FORCE
CRYSTAL GROWTH
DEPOSITION
IRON OXIDES
LAYERS
MAGNETIC PROPERTIES
MAGNETIZATION
SILICON
SPUTTERING
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
TEXTURE
THIN FILMS
TITANIUM NITRIDES
VAPOR PHASE EPITAXY
CHALCOGENIDES
CRYSTAL GROWTH METHODS
ELEMENTS
EPITAXY
FILMS
IRON COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS