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Title: Epitaxial growth and magnetic properties of Fe{sub 3}O{sub 4} films on TiN buffered Si(001), Si(110), and Si(111) substrates

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3484278· OSTI ID:21466913
; ; ;  [1];  [2]
  1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

Epitaxial Fe{sub 3}O{sub 4} thin films were grown on TiN buffered Si(001), Si(110), and Si(111) substrates by dc reactive sputtering deposition. Both Fe{sub 3}O{sub 4} films and TiN buffer are fully epitaxial when grown at substrate temperatures above 150 deg. C, with textured single phase Fe{sub 3}O{sub 4} resulting from room temperature growth. The initial sputtered Fe{sub 3}O{sub 4} formed nuclei islands and then coalesced to epitaxial columnar grains with increasing film thickness. The magnetization decreases and the coercive field increases with decreasing film thickness. There is no in-plane magnetic anisotropy of epitaxial Fe{sub 3}O{sub 4}(001) on Si(001) but Fe{sub 3}O{sub 4} films grown on Si(110) and Si(111) substrates show uniaxial in-plane magnetic anisotropy.

OSTI ID:
21466913
Journal Information:
Applied Physics Letters, Vol. 97, Issue 9; Other Information: DOI: 10.1063/1.3484278; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English