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Epitaxial growth and thermal stability of Fe{sub 4}N film on TiN buffered Si(001) substrate

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3556919· OSTI ID:21560144
; ; ;  [1];  [2]
  1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Epitaxial Fe{sub 4}N thin films were grown on TiN buffered Si(001) substrate by dc reactive sputtering deposition at different substrate temperatures. Fe{sub 4}N films epitaxially grew on TiN within the substrate temperature range from 250 to 350 deg. C. Lower than 250 deg. C there will be some other Fe{sub x}N compounds formed and higher than 400 deg. C there will be only Fe left. Fe{sub 4}N is metastable and the postannealing process in vacuum will decompose Fe{sub 4}N film to Fe. However, introducing 30% N{sub 2} in the postannealing atmosphere can stabilize the Fe{sub 4}N up to 350 deg. C in the (Ar,N{sub 2}) gas mixture. The surface roughness of the epitaxial Fe{sub 4}N films decreases with film thickness. There is in-plane biaxial magnetic anisotropy of epitaxial Fe{sub 4}N(001) on Si(001) with the [100] easy direction.
OSTI ID:
21560144
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English