Epitaxial relationship of ZnO film with Si (001) substrate and its effect on growth and morphology
- State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024 (China)
Using reactive radio-frequency magnetron sputtering, epitaxial growth of ZnO film was observed on Si (001) substrate at different temperatures ranging from room temperature to 750 deg. C. The epitaxial relationship was determined to be ZnO(001) parallel Si(001) in the direction normal to the surface of the films with a deviated angle less than 3 deg. and ZnO[100] parallel Si[110] or ZnO[310] parallel Si[110] in the plan view. Based on (2x1) reconstruction of Si (001), a heteroepitaxial model was suggested to discuss the influence of Si (001) substrate on the growth and morphology of ZnO films at different temperatures.
- OSTI ID:
- 20779421
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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