Molecular beam epitaxial growth of BaTiO{sub 3} single crystal on Ge-on-Si(001) substrates

Journal Article · Mon Feb 28 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3558997· OSTI ID:21518302

Merckling, C; Dekoster, J; Caymax, M ^[1]; Saint-Girons, G; Botella, C; Hollinger, G ^[2]; Heyns, M ^[1]

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1. Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium)
2. INL, UMR5270/CNRS, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully (France)

Thin films of perovskite type BaTiO{sub 3} (BTO) oxide have been grown epitaxially directly on Ge(001) surface at high temperature using molecular beam epitaxy. A stable (2x1) BaGe{sub x} surface periodicity is the critical enabling template for subsequent BTO heteroepitaxy on Ge(001). Reflection high energy electron diffraction (RHEED) and transmission electron microscopy indicate that high quality heteroepitaxy on Ge-on-Si(001) take place with <100>BTO(001)||<110>Ge(001) confirming a 45 deg. rotation epitaxial relationship. X-ray diffraction has been used to study the BTO lattice parameters and we evidenced that both tetragonal and cubic phases of BTO are present in the epilayer.

• OSTI ID: 21518302
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTALS
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FILMS
GERMANIUM
LATTICE PARAMETERS
METALS
MICROSCOPY
MINERALS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PERIODICITY
PEROVSKITE
PEROVSKITES
REFLECTION
SCATTERING
SEMIMETALS
SILICON
SUBSTRATES
SURFACES
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
VARIATIONS
X-RAY DIFFRACTION