Growth, nucleation, and electrical properties of molecular beam epitaxially grown, As-doped Ge on Si substrates
Epitaxial Ge is grown on (100)Si substrates by molecular beam epitaxy (MBE). The effect of various MBE growth conditions on both the nucleation and morphology of Ge grown on Si is studied by Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and reflection high-energy electron diffraction (RHEED). These studies indicate that, at the substrate temperatures examined (300--600 /sup 0/C), heteroepitaxy of Ge on Si favors three-dimensional growth, which is enhanced by both higher growth temperatures and substrate preparation techniques that leave residual surface contamination. Heavily doped n/sup +/ Ge layers are obtained using an elemental As source. The electrical properties of these films are evaluated by Hall--van der Pauw measurements. Growth temperatures of 250 /sup 0/C and optimum As:Ge flux ratios yield electron concentrations as high as 2.5 x 10/sup 20/ cm/sup -3/. Secondary ion mass spectroscopy (SIMS) and Hall effect data show that for As concentrations which exceed this optimum level, a decrease in both the electron concentration and drift mobility is observed, indicating the presence of electrically inactive As.
- Research Organization:
- Solar Energy Research Institute, Golden, Colorado 80401
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 5727255
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 4:3; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC IONS
CHARGED PARTICLES
CHEMICAL COMPOSITION
COATINGS
CRYSTAL DOPING
CRYSTAL GROWTH
DATA
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELECTRON MOBILITY
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
GERMANIUM
HALL EFFECT
INFORMATION
IONS
MASS SPECTROSCOPY
MATERIALS
METALS
MOBILITY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NUCLEATION
NUMERICAL DATA
PARTICLE MOBILITY
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SPECTROSCOPY
VAPOR DEPOSITED COATINGS