Growth and physical property of epitaxial Co{sub 70}Fe{sub 30} thin film on Si substrate via TiN buffer

Journal Article · Mon Jan 14 04:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2834706· OSTI ID:21016278

Ji, C -X; Feng, Lu; Chang, Y Austin; Yang, J Joshua; Rzchowski, M S ^[1]

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1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

Epitaxial Co{sub 70}Fe{sub 30} films with the bcc structure were grown on a Si(001) substrate with TiN as a buffer by sputtering technique. The x-ray diffraction results confirmed the epitaxial nature of the films and the crystallographic relationship was determined as Co{sub 70}Fe{sub 30}(002)<110>//TiN(002)<100>//Si(004)<100>. The surface morphology characterized by atomic force microscopy on our films revealed that smooth surfaces could be obtained at growth temperatures below 350 deg. C. The strain state of 60 nm epitaxial Co{sub 70}Fe{sub 30} films was studied as a function of growth temperature. Magnetization hysteresis loops of the films grown at 300 deg. C were measured using superconducting quantum interface device magnetometer.

• OSTI ID: 21016278
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
BCC LATTICES
BINARY ALLOY SYSTEMS
COBALT ALLOYS
CRYSTAL GROWTH
CRYSTALLOGRAPHY
DEPOSITION
EPITAXY
HYSTERESIS
IRON ALLOYS
MAGNETIZATION
MAGNETOMETERS
MORPHOLOGY
SILICON
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TITANIUM NITRIDES
X-RAY DIFFRACTION