Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

Journal Article · Sun Feb 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615020177· OSTI ID:22470063

Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu. ^[1]

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1. Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

• OSTI ID: 22470063
• Journal Information: Semiconductors, Vol. 49, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CONTROL
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ENRICHMENT
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
NITROGEN
PLASMA
SILICON
SUBSTRATES
SURFACES